• Part: SBAW56TT1G
  • Description: Dual Switching Diode
  • Category: Diode
  • Manufacturer: onsemi
  • Size: 263.97 KB
Download SBAW56TT1G Datasheet PDF
onsemi
SBAW56TT1G
Features - S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Reverse Voltage Forward Current Peak Forward Surge Current THERMAL CHARACTERISTICS Vdc 200 m Adc IFM(surge) 500 m Adc Characteristic Symbol Max Unit Total Device Dissipation, FR- 4 Board (Note 1), TA = 25°C Derated above 25°C 225 m W 1.8 m W/°C Thermal Resistance, Junction- to- Ambient (Note 1) RθJA °C/W Total Device Dissipation, FR- 4 Board (Note 2), TA = 25°C Derated above 25°C 360 m W 2.9 m W/°C Thermal Resistance, Junction- to- Ambient (Note 2) RθJA °C/W Junction and Storage Temperature Range TJ, Tstg - 55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should...