RHRG3060-F085 Datasheet | onsemi

Description The RHRG3060- F085 is a hyperfast diode with soft recovery characteristics (trr < 45 ns). It has half the recovery time of ultrafast diode and is of silicon nitride passivated ion- implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of automotive switching power supplies and other power switching automotive applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. Features - High Speed Switching (trr = 45 ns(Typ.) @ IF = 30 A) - Low Forward Voltage (VF = 1.64 V(Typ.) @ IF = 30 A) - Avalanche Energy Rated - AEC- Q101 Qualified and PPAP Capable - This Device is Pb- Free Applications - Switching Power Supply - Power Switching Circuits - Automotive and General Purpose .onsemi. 1 2 1. Cathode 2. Anode TO- 247- 2LD CASE 340CL 1 1. Cathode 2 2. Anode MARKING DIAGRAM $Y&Z&3&K RHRG3060 $Y &Z &3 &K RHRG3060 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor ponents Industries, LLC, 2014 March, 2020 - Rev. 4 Publication Order Number: RHRG3060- F085/D RHRG3060- F085 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 25°C) Non- repetitive Peak Surge Current (Halfwave 1 Phase 50 Hz) Avalanche Energy (1 A, 40 m H) Operating Junction and Storage Temperature VRRM VRWM VR IF(AV) IFSM EAVL TJ, TSTG 600 600 600 30 90 20 - 55 to...