• Part: RB751V40T1G
  • Description: Schottky Barrier Diode
  • Category: Diode
  • Manufacturer: onsemi
  • Size: 174.94 KB
Download RB751V40T1G Datasheet PDF
onsemi
RB751V40T1G
Features - Extremely Fast Switching Speed - Extremely Low Forward Voltage - 0.28 Volts (Typ) @ IF = 1 m Adc - Low Reverse Current - NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant MAXIMUM RATINGS Rating Symbol Value Unit Peak Reverse Voltage Reverse Voltage Forward Continuous Current (DC) Peak Forward Surge Current Electrostatic Discharge VRM VR IF IFSM ESD Vdc 30 m A 500 m A HBM Class: 1C MM Class: A THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board, (Note 1) TA = 25C Derate above 25C 200 m W 1.57 m W/C Thermal Resistance Junction- to- Ambient Rq JA C/W Junction and Storage Temperature Range TJ, Tstg - 55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded,...