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PCP1405 - Power MOSFET

Features

  • On-resistance RDS(on)1=5Ω (typ).
  • 2.5V drive.
  • Protection diode in.
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain to Gate Voltage Gate to Drain Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation VDSS VGSS VDGS VGDS ID IDP PD PW10s, duty cycle1% Tc=25C When mounted on ceramic substrate (600mm20.8mm) Junction Temperature Tj Storage Tempe.

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Datasheet Details

Part number PCP1405
Manufacturer onsemi
File Size 442.54 KB
Description Power MOSFET
Datasheet download datasheet PCP1405 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA2326A PCP1405 Power MOSFET 250V, 6.5Ω, 0.6A, Single N-Channel http://onsemi.com Features  On-resistance RDS(on)1=5Ω (typ)  2.5V drive  Protection diode in  Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain to Gate Voltage Gate to Drain Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation VDSS VGSS VDGS VGDS ID IDP PD PW10s, duty cycle1% Tc=25C When mounted on ceramic substrate (600mm20.8mm) Junction Temperature Tj Storage Temperature Tstg Value 250 10 250 10 0.6 2.4 3.5 1.3 150 - 55 to +150 Unit V V V V A A W W C C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
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