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  ON Semiconductor Electronic Components Datasheet  

PCP1405 Datasheet

Power MOSFET

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Ordering number : ENA2326A
PCP1405
Power MOSFET
250V, 6.5, 0.6A, Single N-Channel
http://onsemi.com
Features
On-resistance RDS(on)1=5(typ)
2.5V drive
Protection diode in
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Conditions
Drain to Source Voltage
Gate to Source Voltage
Drain to Gate Voltage
Gate to Drain Voltage
Drain Current (DC)
Drain Current (Pulse)
Power Dissipation
VDSS
VGSS
VDGS
VGDS
ID
IDP
PD
PW10s, duty cycle1%
Tc=25C
When mounted on ceramic substrate (600mm20.8mm)
Junction Temperature
Tj
Storage Temperature
Tstg
Value
250
10
250
10
0.6
2.4
3.5
1.3
150
- 55 to +150
Unit
V
V
V
V
A
A
W
W
C
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Junction to Case Steady State
Junction to Ambient
When mounted on ceramic substrate (600mm20.8mm)
Symbol
RJC
RJA
Value
35.7
96.1
Unit
C/W
Electrical Characteristics at Ta 25C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
Conditions
ID=1mA, VGS=0V
VDS=250V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=0.3A
min
250
0.4
Value
Unit
typ max
V
1 A
10 A
1.3 V
1.4 S
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
July, 2014
72414HK TC-00003120/41514TKIM PA No.A2326-1/5


  ON Semiconductor Electronic Components Datasheet  

PCP1405 Datasheet

Power MOSFET

No Preview Available !

Continued from preceding page.
Parameter
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
Symbol
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
PCP1405
Conditions
ID=0.3A, VGS=4.5V
ID=0.3A, VGS=2.5V
VDS=20V, f=1MHz
See specified Test Circuit
VDS=125V, VGS=4.5V, ID=0.6A
IS=0.6A, VGS=0V
Value
Unit
min typ max
5 6.5
5.1 7.2
140 pF
8 pF
3 pF
7.6 ns
7.8 ns
19 ns
26 ns
2.1 nC
0.3 nC
0.7 nC
0.84
1.2 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Ordering & Package Information
Device
PCP1405-TD-H
Package
PCP, SC-62
SOT-89, TO-243
Shipping
1,000
pcs. / reel
note
Pb-Free
and
Halogen Free
Packing Type:TD
Marking
Electrical Connection
Switching Time Test Circuit
No.A2326-2/5


Part Number PCP1405
Description Power MOSFET
Maker ON Semiconductor
PDF Download

PCP1405 Datasheet PDF






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