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  ON Semiconductor Electronic Components Datasheet  

PCP1403 Datasheet

N-Channel Power MOSFET

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Ordering number : ENA2294A
PCP1403
N-Channel Power MOSFET
60V, 4.5A, 117m, Single PCP
http://onsemi.com
Features
On-resistance RDS(on)1=92m(typ.)
4V drive
Protection Diode in
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Conditions
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS
Drain Current (DC)
Drain Current (Pulse)
Power Dissipation
ID
IDP PW10μs, duty cycle1%
Tc=25°C
PD When mounted on ceramic substrate (600mm2×0.8mm)
Junction Temperature
Tj
Storage Temperature
Tstg
Value
60
±20
4.5
18
3.5
1.3
150
- 55 to +150
Unit
V
V
A
A
W
W
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Junction to Case Steady State
Junction to Ambient
When mounted on ceramic substrate (600mm2×0.8mm)
Symbol
RθJC
RθJA
Value
35.7
96.1
Unit
°C /W
°C /W
Electrical Characteristics at Ta = 25°C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
Conditions
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=2A
ID=2A, VGS=10V
ID=1A, VGS=4.5V
ID=1A, VGS=4V
VDS=20V, f=1MHz
min
60
1.2
Value
Unit
typ max
V
1 μA
±10 μA
2.6 V
2.5 S
92 117 mΩ
120 168 mΩ
132 185 mΩ
310 pF
40 pF
25 pF
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
May, 2014
52014 TKIM TC-00003103/22514 TKIM No. A2294-1/5


  ON Semiconductor Electronic Components Datasheet  

PCP1403 Datasheet

N-Channel Power MOSFET

No Preview Available !

Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
PCP1403
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit
VDS=30V, VGS=10V, ID=4.5A
IS=4.5A, VGS=0V
Value
Unit
min typ max
5.6 ns
7.0 ns
26 ns
14 ns
6.7 nC
1.0 nC
1.6 nC
0.88
1.2 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Ordering & Package Information
Device
PCP1403-TD-H
Package
PCP, SC-62
SOT-89, TO-243
Shipping
1,000
pcs. / reel
note
Pb-Free
and
Halogen Free
Packing Type:TD
Marking
TD(PCP)
Electrical Connection
2
Switching Time Test Circuit
1
3
No.A2294-2/5


Part Number PCP1403
Description N-Channel Power MOSFET
Maker ON Semiconductor
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PCP1403 Datasheet PDF






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