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  ON Semiconductor Electronic Components Datasheet  

PCP1402 Datasheet

Power MOSFET

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Ordering number : ENA2303A
PCP1402
Power MOSFET
250V, 2.4, 1.2A, Single N-Channel
http://onsemi.com
Features
On-resistance RDS(on)=1.8(typ)
Input Capacitance Ciss=210pF (typ)
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Conditions
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Power Dissipation
VDSS
VGSS
ID
IDP
PD
PW10s, duty cycle1%
Tc=25C
When mounted on ceramic substrate (600mm20.8mm)
Junction Temperature
Tj
Storage Temperature
Tstg
Value
250
30
1.2
4.8
3.5
1.5
150
55 to +150
Unit
V
V
A
A
W
W
C
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Junction to Case Steady State
Junction to Ambient
When mounted on ceramic substrate (600mm20.8mm)
Symbol
RJC
RJA
Value
35.7
83.3
Unit
C /W
C /W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Electrical Characteristics at Ta 25C
Parameter
Symbol
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
Conditions
ID=1mA, VGS=0V
VDS=250V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=600mA
min
250
2.5
Value
Unit
typ max
V
1 A
10 A
3.5 V
1.2 S
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
September, 2014
90914HK TC-00003146/52614TKIM No.A2303-1/5


  ON Semiconductor Electronic Components Datasheet  

PCP1402 Datasheet

Power MOSFET

No Preview Available !

Continued from preceding page.
Parameter
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
Symbol
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
PCP1402
Conditions
ID=600mA, VGS=10V
VDS=20V, f=1MHz
See specified Test Circuit
VDS=125V, VGS=10V, ID=1.2A
IS=1.2A, VGS=0V
Value
Unit
min Typ max
1.8 2.4
210 pF
20 pF
7 pF
7.9 ns
6.7 ns
14.5
ns
30 ns
4.2 nC
1.4 nC
1.0 nC
0.86
1.2 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Ordering & Package Information
Device
PCP1402-TD-H
Package
PCP, SC-62
SOT-89, TO-243
Shipping
1,000
pcs. / reel
note
Pb-Free
and
Halogen Free
Packing Type:TD
Marking
TD(PCP)
Electrical Connection
2
Switching Time Test Circuit
1
3
No.A2303-2/5


Part Number PCP1402
Description Power MOSFET
Maker ON Semiconductor
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PCP1402 Datasheet PDF






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