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PCP1302 - P-Channel Power MOSFET

Features

  • On-resistance RDS(on)1=200mΩ(typ. ).
  • 4V drive.
  • Halogen free compliance.
  • Protection Diode in Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current (DC) Drain Current (Pulse) Power Dissipation ID IDP PW≤10μs, duty cycle≤1% Tc=25°C PD When mounted on ceramic substrate (600mm2×0.8mm) Junction Temperature Tj Storage Temperature Tstg Value.
  • 60 ±2.

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Datasheet Details

Part number PCP1302
Manufacturer ON Semiconductor
File Size 368.91 KB
Description P-Channel Power MOSFET
Datasheet download datasheet PCP1302 Datasheet
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Full PDF Text Transcription

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Ordering number : ENA2227 PCP1302 P-Channel Power MOSFET −60V, −3A, 266mΩ, Single PCP http://onsemi.com Features • On-resistance RDS(on)1=200mΩ(typ.) • 4V drive • Halogen free compliance • Protection Diode in Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current (DC) Drain Current (Pulse) Power Dissipation ID IDP PW≤10μs, duty cycle≤1% Tc=25°C PD When mounted on ceramic substrate (600mm2×0.8mm) Junction Temperature Tj Storage Temperature Tstg Value −60 ±20 −3 −12 3.5 1.3 150 − 55 to +150 Unit V V A A W W °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
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