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PCP1208 - Bipolar Transistor

Datasheet Summary

Features

  • VCEO=200V, IC=0.7A.
  • High allowable power dissipation.
  • Halogen free compliance.
  • Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ. )@IC=0.35A.
  • High-speed switching tf=70ns(typ. )@IC=0.3A Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current VCBO VCEO VEBO IC ICP IB Collector Dissipa.

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Datasheet Details

Part number PCP1208
Manufacturer ON Semiconductor
File Size 232.62 KB
Description Bipolar Transistor
Datasheet download datasheet PCP1208 Datasheet
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Full PDF Text Transcription

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Ordering number : ENA1836B PCP1208 Bipolar Transistor 200V, 0.7A Low VCE(sat) NPN Single PCP http://onsemi.com Features • VCEO=200V, IC=0.7A • High allowable power dissipation • Halogen free compliance • Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ.)@IC=0.35A • High-speed switching tf=70ns(typ.)@IC=0.3A Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current VCBO VCEO VEBO IC ICP IB Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Conditions When mounted on ceramic substrate (450mm2×0.8mm) Tc=25°C Ratings 220 200 8 0.7 2 140 1.3 3.
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