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  ON Semiconductor Electronic Components Datasheet  

PCP1208 Datasheet

Bipolar Transistor

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Ordering number : ENA1836B
PCP1208
Bipolar Transistor
200V, 0.7A Low VCE(sat) NPN Single PCP
http://onsemi.com
Features
VCEO=200V, IC=0.7A
High allowable power dissipation Halogen free compliance
Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ.)@IC=0.35A
High-speed switching tf=70ns(typ.)@IC=0.3A
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
VCBO
VCEO
VEBO
IC
ICP
IB
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Conditions
When mounted on ceramic substrate (450mm2×0.8mm)
Tc=25°C
Ratings
220
200
8
0.7
2
140
1.3
3.5
150
-55 to +150
Unit
V
V
V
A
A
mA
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7008B-003
Top View
4.5
1.6
PCP1208-TD-H
1.5
Ordering & Package Information
Device
Package
Shipping
PCP1208-TD-H
PCP
(SC-62, SOT-89,
TO-243)
1,000
pcs./reel
note
Pb Free
and
Halogen Free
Packing Type: TD
Marking
1
0.4
0.5
2
1.5
3.0
3
0.4
0.75
Bottom View
1 : Base
2 : Collector
3 : Emitter
PCP
Semiconductor Components Industries, LLC, 2013
May, 2013
TD
Electrical Connection
2
1
3
52213 TKIM TC-00002872/72512 TKIM/12611CB TKIM TC-00002563 No.1836-1/7


  ON Semiconductor Electronic Components Datasheet  

PCP1208 Datasheet

Bipolar Transistor

No Preview Available !

PCP1208
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=100V, IE=0A
VEB=4V, IC=0A
VCE=5V, IC=100mA
VCE=10V, IC=100mA
VCB=10V, f=1MHz
IC=0.35A, IB=35mA
IC=0.35A, IB=35mA
IC=10μA, IE=0A
IC=1mA, RBE=
IE=10μA, IC=0A
See specied Test Circuit.
Switching Time Test Circuit
PW=50μs
D.C.1%
INPUT
50Ω
IB1
IB2
RB
OUTPUT
RL
+
820μF
VCC=100V
IC=10IB1= --10IB2=0.3A
Ratings
min typ
200
120
9
115
0.82
220
200
8
50
2
70
max
1
1
560
200
1.2
Unit
μA
μA
MHz
pF
mV
V
V
V
V
ns
μs
ns
No.1836-2/7


Part Number PCP1208
Description Bipolar Transistor
Maker ON Semiconductor
PDF Download

PCP1208 Datasheet PDF






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