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  ON Semiconductor Electronic Components Datasheet  

PCP1103 Datasheet

Bipolar Transistor

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Ordering number : ENA1346A
PCP1103
Bipolar Transistor
–30V, –1.5A, Low VCE(sat) PNP Single PCP
http://onsemi.com
Applications
DC / DC converters, relay drivers, lamp drivers, motor drivers, IGBT gate drivers
Features
Adoption of MBIT process
Low collector to emitter saturation voltage
High allowable power dissipation
Large current capacity
High speed switching
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Conditions
Ratings
--30
--30
--5
--1.5
--5
Unit
V
V
V
A
A
Continued on next page.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
PCP1103-TD-H
1.5
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
Marking
1
0.4
0.5
2
1.5
3.0
3
0.4
0.75
Bottom View
1 : Base
2 : Collector
3 : Emitter
PCP
Semiconductor Components Industries, LLC, 2013
December, 2013
TD
Electrical Connection
2
1
3
D1113 TKIM TC-00003073/N1208EA MSIM TC-00001718 No.A1346-1/5


  ON Semiconductor Electronic Components Datasheet  

PCP1103 Datasheet

Bipolar Transistor

No Preview Available !

PCP1103
Continued from preceding page.
Parameter
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
IB
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (450mm2×0.8mm)
Tc=25°C
Ratings
--300
1.3
3.5
150
--55 to +150
Unit
mA
W
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCB= --30V, IE=0A
VEB= --4V, IC=0A
VCE= --2V, IC= --100mA
VCE= --10V, IC= --300mA
VCB= --10V, f=1MHz
IC= --0.75A, IB= --15mA
IC= --0.75A, IB= --15mA
IC= --10μA, IE=0A
IC= --1mA, RBE=
IE= --10μA, IC=0A
See specied Test Circuit.
Switching Time Test Circuit
Ratings
min typ
200
450
9
--250
--0.85
--30
--30
--5
35
115
30
max
--0.1
--0.1
560
--375
--1.2
Unit
μA
μA
MHz
pF
mV
V
V
V
V
ns
ns
ns
PW=50μs
D.C.1%
INPUT
50Ω
IB1
IB2
RB
OUTPUT
RL
+
820μF
VCC= --12V
IC=20IB1= --20IB2= --0.75A
Ordering Information
Device
PCP1103-TD-H
Package
PCP
Shipping
1,000pcs./reel
memo
Pb Free and Halogem Free
IC -- VCE
--2.0
--1.8 --50m--A40mA
--1.6 --30mA
--1.4 --20mA
--1.2
--1.0 --8mA --10mA
--0.8 --6mA
--4mA
--0.6
--2mA
--0.4
--0.2
0
0
IB=0mA
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Collector to Emitter Voltage, VCE -- V IT14106
--1.6
VCE= --2V
--1.4
IC -- VBE
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base to Emitter Voltage, VBE -- V IT14107
No.A1346-2/5


Part Number PCP1103
Description Bipolar Transistor
Maker ON Semiconductor
Total Page 5 Pages
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