
	ON Semiconductor Electronic Components Datasheet

PCP1103 Datasheet

Bipolar Transistor

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Ordering number : ENA1346A

PCP1103

Bipolar Transistor

–30V, –1.5A, Low VCE(sat) PNP Single PCP

http://onsemi.com

Applications

• DC / DC converters, relay drivers, lamp drivers, motor drivers, IGBT gate drivers

Features

• Adoption of MBIT process

• Low collector to emitter saturation voltage

• High allowable power dissipation

• Large current capacity

• High speed switching

• Halogen free compliance

Speciﬁcations

Absolute Maximum Ratings at Ta=25°C

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Collector Current (Pulse)

Symbol

VCBO

VCEO

VEBO

ICP

Conditions

Ratings

--30

--5

--1.5

--5

Unit

Continued on next page.

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

unit : mm (typ)

7007B-004

Top View

4.5

1.6

PCP1103-TD-H

1.5

Product & Package Information

• Package

: PCP

• JEITA, JEDEC

: SC-62, SOT-89, TO-243

• Minimum Packing Quantity : 1,000 pcs./reel

Packing Type: TD

Marking

0.4

0.5

1.5

3.0

0.4

0.75

Bottom View

1 : Base

2 : Collector

3 : Emitter

PCP

Semiconductor Components Industries, LLC, 2013

December, 2013

Electrical Connection

D1113 TKIM TC-00003073/N1208EA MSIM TC-00001718 No.A1346-1/5


	ON Semiconductor Electronic Components Datasheet

PCP1103 Datasheet

Bipolar Transistor

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PCP1103

Continued from preceding page.

Parameter

Base Current

Collector Dissipation

Junction Temperature

Storage Temperature

Symbol

Tstg

Conditions

When mounted on ceramic substrate (450mm2×0.8mm)

Tc=25°C

Ratings

--300

1.3

3.5

150

--55 to +150

Unit

°C

Electrical Characteristics at Ta=25°C

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Turn-On Time

Storage Time

Fall Time

Symbol

ICBO

IEBO

hFE

Cob

VCE(sat)

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

ton

tstg

Conditions

VCB= --30V, IE=0A

VEB= --4V, IC=0A

VCE= --2V, IC= --100mA

VCE= --10V, IC= --300mA

VCB= --10V, f=1MHz

IC= --0.75A, IB= --15mA

IC= --10μA, IE=0A

IC= --1mA, RBE=∞

IE= --10μA, IC=0A

See speciﬁed Test Circuit.

Switching Time Test Circuit

Ratings

min typ

200

450

--250

--0.85

--30

--5

115

max

--0.1

560

--375

--1.2

Unit

μA

MHz

PW=50μs

D.C.≤1%

INPUT

50Ω

IB1

IB2

OUTPUT

820μF

VCC= --12V

IC=20IB1= --20IB2= --0.75A

Ordering Information

Device

PCP1103-TD-H

Package

PCP

Shipping

1,000pcs./reel

memo

Pb Free and Halogem Free

IC -- VCE

--2.0

--1.8 --50m--A40mA

--1.6 --30mA

--1.4 --20mA

--1.2

--1.0 --8mA --10mA

--0.8 --6mA

--4mA

--0.6

--2mA

--0.4

--0.2

IB=0mA

--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0

Collector to Emitter Voltage, VCE -- V IT14106

--1.6

VCE= --2V

--1.4

IC -- VBE

--1.2

--1.0

--0.8

--0.6

--0.4

--0.2

--0.4

--0.6

--0.8

--1.0

--1.2

Base to Emitter Voltage, VBE -- V IT14107

No.A1346-2/5

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