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  ON Semiconductor Electronic Components Datasheet  

P2N2907A Datasheet

Amplifier Transistor

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P2N2907A
Amplifier Transistor
PNP Silicon
Features
These are Pb--Free Devices*
MAXIMUM RATINGS
Rating
Collector--Emitter Voltage
Collector--Base Voltage
Emitter--Base Voltage
Collector Current -- Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Symbol
VCEO
VCBO
VEBO
IC
PD
Value
--60
--60
--5.0
--600
625
5.0
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
PD
1.5
W
Derate above 25°C
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
--55 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RθJA 200 °C/W
Thermal Resistance, Junction to Case
RθJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
TO--92
CASE 29
STYLE 17
123
STRAIGHT LEAD
BULK PACK
12 3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
P2N2
907A
AYWW G
G
*For additional information on our Pb--Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
April, 2007 -- Rev. 6
1
A = Assembly Location
Y = Year
WW = Work Week
G = Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
P2N2907AG
TO--92
5000 Units / Bulk
(Pb--Free)
P2N2907ARL1G TO--92 2000 / Tape & Reel
(Pb--Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
P2N2907A/D


  ON Semiconductor Electronic Components Datasheet  

P2N2907A Datasheet

Amplifier Transistor

No Preview Available !

P2N2907A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector--Emitter Breakdown Voltage (Note 1)
(IC = --10 mAdc, IB = 0)
Collector--Base Breakdown Voltage
(IC = --10 mAdc, IE = 0)
Emitter--Base Breakdown Voltage
(IE = --10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = --30 Vdc, VEB(off) = --0.5 Vdc)
Collector Cutoff Current
(VCB = --50 Vdc, IE = 0)
(VCB = --50 Vdc, IE = 0, TA = 150°C)
Emitter Cutoff Current
(VEB = --3.0 Vdc)
Collector Cutoff Current
(VCE = --10 V)
Base Cutoff Current
(VCE = --30 Vdc, VEB(off) = --0.5 Vdc)
ON CHARACTERISTICS
DC Current Gain
(IC = --0.1 mAdc, VCE = --10 Vdc)
(IC = --1.0 mAdc, VCE = --10 Vdc)
(IC = --10 mAdc, VCE = --10 Vdc)
(IC = --150 mAdc, VCE = --10 Vdc) (Note 1)
(IC = --500 mAdc, VCE = --10 Vdc) (Note 1)
Collector--Emitter Saturation Voltage (Note 1)
(IC = --150 mAdc, IB = --15 mAdc)
(IC = --500 mAdc, IB = --50 mAdc)
Base--Emitter Saturation Voltage (Note 1)
(IC = --150 mAdc, IB = --15 mAdc)
(IC = --500 mAdc, IB = --50 mAdc)
SMALL--SIGNAL CHARACTERISTICS
Current--Gain -- Bandwidth Product (Notes 1 and 2)
(IC = --50 mAdc, VCE = --20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = --10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = --2.0 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn--On Time
Delay Time
Rise Time
(VCC = --30 Vdc, IC = --150 mAdc,
IB1 = --15 mAdc) (Figures 1 and 5)
Turn--Off Time
Storage Time
Fall Time
(VCC = --6.0 Vdc, IC = --150 mAdc,
IB1 = IB2 = --15 mAdc) (Figure 2)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
Symbol
Min
Max
Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
ICBO
IEBO
ICEO
IBEX
--60
--60
--5.0
--
--
--
--
--
--
--
--
--
--50
--0.01
--10
--10
--10
--50
Vdc
Vdc
Vdc
nAdc
mAdc
nAdc
nAdc
nAdc
hFE
VCE(sat)
VBE(sat)
75
100
100
100
50
--
--
--
--
--
--
--
300
--
--0.4
--1.6
--1.3
--2.6
--
Vdc
Vdc
fT MHz
200 --
Cobo
pF
-- 8.0
Cibo
pF
-- 30
ton -- 50 ns
td -- 10 ns
tr -- 40 ns
toff -- 110 ns
ts -- 80 ns
tf -- 30 ns
http://onsemi.com
2


Part Number P2N2907A
Description Amplifier Transistor
Maker ON Semiconductor
Total Page 6 Pages
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