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  ON Semiconductor Electronic Components Datasheet  

P2008A Datasheet

General Purpose EMI Reduction IC

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P2008A
General Purpose EMI
Reduction IC
Description
The P2008A is a versatile spread spectrum frequency modulator
designed specifically for digital camera and other digital video and
imaging applications. The P2008A reduces electromagnetic
interference (EMI) at the clock source, allowing system wide
reduction of EMI of down stream clock and data dependent signals.
The P2008A allows significant system cost savings by reducing the
number of circuit board layers ferrite beads, shielding and other
passive components that are traditionally required to pass EMI
regulations.
The P2008A uses the most efficient and optimized modulation
profile approved by the FCC and is implemented in a proprietary all
digital method.
The P2008A modulates the output of a single PLL in order to
“spread” the bandwidth of a synthesized clock, and more importantly,
decreases the peak amplitudes of its harmonics. This results in
significantly lower system EMI compared to the typical narrow band
signal produced by oscillators and most frequency generators.
Lowering EMI by increasing a signal’s bandwidth is called ‘spread
spectrum clock generation.’
Applications
The P2008A is targeted towards cable, xDSL, fax modem, settop
box, USB controller, DSC, and other embedded systems.
Features
FCC Approved Method of EMI Attenuation
Provides up to 15 dB of EMI Suppression
Generates a 1X or 1/2X Low EMI Spread Spectrum Clock of the
Input Frequency
Input Frequency Range: 4 MHz to 32 MHz
Internal Loop Filter Minimizes External Components and Board
Space
Spreading Ranges from ±0.8% to ±3.2%
SSON# Control Pin for Spread Spectrum Enable and Disable Options
Low CycletoCycle Jitter
3.3 V Operating Voltage
Ultralow Power CMOS Design
Available in 8pin SOIC and TSSOP Packages
These are PbFree Devices
http://onsemi.com
SOIC8
S SUFFIX
CASE 751BD
TSSOP8
T SUFFIX
CASE 948AL
PIN CONFIGURATION
1
XIN / CLKIN
VDD
XOUT
SR0
DIV2
ModOUT
VSS
SSON#
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
August, 2011 Rev. 3
1
Publication Order Number:
P2008A/D


  ON Semiconductor Electronic Components Datasheet  

P2008A Datasheet

General Purpose EMI Reduction IC

No Preview Available !

P2008A
SR0 SSON#
VDD
DIV2
XIN /
CLKIN
XOUT
Crystal
Oscillator
Frequency
Divider
Feedback
Divider
Modulation
Phase
Detector
Loop
Filter
PLL
VCO
Output
Divider
ModOUT
VSS
Figure 1. Block Diagram
Table 1. ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Rating
Unit
VDD, VIN
Voltage on any pin with respect to Ground
0.5 to +4.6
V
TSTG
Storage temperature
65 to +125
°C
TA Operating temperature
0 to +70
°C
Ts Max. Soldering Temperature (10 sec)
260 °C
TJ Junction Temperature
150 °C
TDV Static Discharge Voltage (As per JEDEC STD22A114B)
2 KV
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 2. DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Min Typ Max Unit
VIL Input low voltage
VIH Input high voltage
IIL Input low current
(pullup resistors on inputs SR0 and DIV2)
VSS0.3
0.8
V
2.0 VDD+0.3 V
− − −35 mA
IIH Input high current (pulldown resistor on input SSON#)
− − 35 mA
IXOL XOUT Output Low Current (@ 0.4 V, VDD = 3.3 V)
3 mA
IXOH
XOUT Output High Current (@ 2.5 V, VDD = 3.3 V)
3 mA
VOL Output low voltage (VDD = 3.3 V, IOL = 10 mA)
− − 0.4 V
VOH Output high voltage (VDD = 3.3 V, IOH = 10 mA)
2.5 − − V
ICC
Dynamic supply current normal mode (3.3 V, and 15 pF loading)
6.0
7.0
8.3
mA
IDD Static supply current standby mode
0.6 mA
VDD
Operating voltage
3.0 3.3 3.6
V
tON
ZOUT
Power up time (first locked clock cycle after power up)
Clock output impedance
0.18 mS
50 W
http://onsemi.com
2


Part Number P2008A
Description General Purpose EMI Reduction IC
Maker ON Semiconductor
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