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  ON Semiconductor Electronic Components Datasheet  

NXH35C120L2C2SG Datasheet

TMPIM 35A CIB/CI Module

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TMPIM 35 A CIB/CI Module
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NXH35C120L2C2SG/S1G
The NXH35C120L2C2SG is a transfermolded power module
containing a converterinverterbrake circuit consisting of six 35 A,
1600 V rectifiers, six 35 A, 1200 V IGBTs with inverse diodes, one
35 A, 1200 V brake IGBT with brake diode and an NTC thermistor.
The NXH35C120L2C2S1G is a transfermolded power module
containing a converterinverter circuit consisting of six 35 A, 1600 V
rectifiers, six 35 A, 1200 V IGBTs with inverse diodes, and an NTC
thermistor.
Features
Low Thermal Resistance
6 mm Clearance Distance from Pin to Heatsink
Compact 73 mm × 40 mm × 8 mm Package
Solderable Pins
Thermistor
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
Industrial Motor Drives
Servo Drives
DBPLUS
P
www.onsemi.com
DIP26
CASE 181AD
MARKING DIAGRAM
GUP
GVP
GWP
R
S BUVW
T
GB
GUN
GVN
GWN
TH1
DBMINUS
NB
NU
NV
NW
Figure 1. NXH35C120L2C2SG Schematic Diagram
DBPLUS
P
TH2
ORDERING INFORMATION
Device
NXH35C120L2C2SG
Package
DIP26
(PbFree)
Shipping
6 Units /
Tube
NXH35C120L2C2S1G DIP26
6 Units /
GUP
GVP
GWP
R
(PbFree)
Tube
S UVW
T This document contains information on a product under
development. ON Semiconductor reserves the right to
GUN
GVN
GWN
change or discontinue this product without notice.
TH1
DBMINUS
NU NV NW
Figure 2. NXH35C120L2C2S1G Schematic Diagram
TH2
© Semiconductor Components Industries, LLC, 2019
February, 2020 Rev. P2
1
Publication Order Number:
NXH35C120L2C2/D


  ON Semiconductor Electronic Components Datasheet  

NXH35C120L2C2SG Datasheet

TMPIM 35A CIB/CI Module

No Preview Available !

NXH35C120L2C2SG/S1G
MAXIMUM RATINGS (Note 1)
Rating
Symbol
Value
Unit
IGBT
CollectorEmitter Voltage
GateEmitter Voltage
Continuous Collector Current @ Tc = 80°C (TVJmax = 175°C)
Pulsed Collector Current
DIODE
VCES
VGE
IC
ICpulse
1200
±20
35
105
V
V
A
A
Peak Repetitive Reverse Voltage
Continuous Forward Current @ Tc = 80°C (TVJmax = 175°C)
Repetitive Peak Forward Current (TJ = 175°C)
RECTIFIER DIODE
VRRM
IF
IFRM
1200
35
105
V
A
A
Peak Repetitive Reverse Voltage
Continuous Forward Current @ Tc = 80°C (TVJmax = 150°C)
Repetitive Peak Forward Current (TJ = 150°C)
I2t Value
(10 ms sin180°) @ 25°C
(10 ms sin180°) @ 150°C
VRRM
IF
IFRM
I2t
1600
35
105
1126
510
V
A
A
A2t
Surge Current (10 ms sin180°) @ 25°C
THERMAL PROPERTIES
IFSM 520 A
Storage Temperature Range
INSULATION PROPERTIES
Tstg
40 to +125
°C
Isolation Test Voltage, t = 1 s, 50 Hz
Internal Isolation
Vis
3000
VRMS
AI2O3
Creepage Distance
6.0 mm
Clearance Distance
6.0 mm
Comperative Tracking Index
CTI > 400
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
www.onsemi.com
2


Part Number NXH35C120L2C2SG
Description TMPIM 35A CIB/CI Module
Maker ON Semiconductor
Total Page 9 Pages
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