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NXH25C120L2C2SG Datasheet

TMPIM 25A CIB Module

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TMPIM 25 A CIB Module
NXH25C120L2C2SG
The NXH25C120L2C2SG is a transfermolded power module
containing a converterinverterbrake circuit consisting of six 25 A,
1600 V rectifiers, six 25 A, 1200 V IGBTs with inverse diodes, one
25 A, 1200 V brake IGBT with brake diode and an NTC thermistor.
Features
Low Thermal Resistance
6 mm Clearance Distance between Pin to Heatsink
Compact 73 mm × 40 mm × 8 mm Package
Solderable Pins
Thermistor
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
Industrial Motor Drives
Servo Drives
DBPLUS P
www.onsemi.com
DIP26 67.8x40
CASE 181AD
MARKING DIAGRAM
NXH25C120L2C2SG
ZZZATYWW
GUP
GVP
GWP
R NXH25C120L2C2SG = Specific Device Code
ZZZ = Assembly Lot Code
S B U V W AT = Assembly & Test Location
Y = Year
T WW = Work Week
GB
GUN
GVN
GWN
TH1
ORDERING INFORMATION
Device
Package Shipping
DBMINUS
NB
NU
NV
NW
TH2
NXH25C120L2C2SG
DIP26
(PbFree)
6 Units /
Tube
Figure 1. NXH25C120L2C2SG Schematic Diagram
© Semiconductor Components Industries, LLC, 2020
March, 2020 Rev. 0
1
Publication Order Number:
NXH25C120L2C2SG/D


  ON Semiconductor Electronic Components Datasheet  

NXH25C120L2C2SG Datasheet

TMPIM 25A CIB Module

No Preview Available !

NXH25C120L2C2SG
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
IGBT
CollectorEmitter Voltage
GateEmitter Voltage
Continuous Collector Current @ TC = 80°C (TvJmax = 175°C)
Pulsed Collector Current
DIODE
VCES
VGE
IC
ICpulse
1200
±20
25
75
V
V
A
A
Peak Repetitive Reverse Voltage
Continuous Forward Current @ TC = 80°C (TvJmax = 175°C)
Repetitive Peak Forward Current
RECTIFIER DIODE
VRRM
IF
IFRM
1200
25
75
V
A
A
Peak Repetitive Reverse Voltage
Continuous Forward Current @ TC = 80°C (TvJmax = 150°C)
Repetitive Peak Forward Current
I2t value (10 ms single halfsine wave) @ 25°C
(10 ms single halfsine wave) @ 150°C
VRRM
IF
IFRM
I2t
1600
25
75
680
360
V
A
A
A2t
Surge current (10 ms sin180°) @ 25°C
IFSM 370 A
THERMAL PROPERTIES
Storage Temperature range
INSULATION PROPERTIES
Tstg
40 to 125
°C
Isolation test voltage, t = 1 sec, 50 Hz
Internal isolation
Creepage distance
Vis
3000
VRMS
Al2O3
6.0 mm
Clearance distance
6.0 mm
Comperative Tracking Index
CTI > 400
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
www.onsemi.com
2


Part Number NXH25C120L2C2SG
Description TMPIM 25A CIB Module
Maker ON Semiconductor
Total Page 10 Pages
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