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NVH4L080N120SC1 Datasheet, ON Semiconductor

NVH4L080N120SC1 mosfet equivalent, sic mosfet.

NVH4L080N120SC1 Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 371.08KB)

NVH4L080N120SC1 Datasheet

Features and benefits


* 1200 V @ TJ = 175°C
* Max RDS(on) = 110 mW at VGS = 20 V, ID = 20 A
* High Speed Switching with Low Capacitance
* 100% Avalanche Tested
* AEC−Q101 Q.

Application


* Automotive Auxiliary Motor Drive
* Automotive On Board Charger
* Automotive DC−DC Converter for EV/HEV DA.

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Con.

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TAGS

NVH4L080N120SC1
SiC
MOSFET
ON Semiconductor

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