NVH025N65S3 mosfet equivalent, automotive n-channel mosfet.
* AEC−Q101 Qualified
* Max Junction Temperature 150°C
* Typ. RDS(on) = 19.9 mΩ
* Ultra Low Gate Charge (Typ. QG = 236 nC)
* Low Effective Output Capac.
* Automotive PHEV−BEV DC−DC Converter
* Automotive Onboard Charger for PHEV−BEV
www.onsemi.com
BVDSS 650 V
RD.
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