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NTD6416AN, NVD6416AN
N-Channel Power MOSFET 100 V, 17 A, 81 mW
Features
• Low RDS(on) • High Current Capability • 100% Avalanche Tested • NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
VDSS
100
V
Gate−to−Source Voltage − Continuous
VGS ±20 V
Continuous Drain Current
Steady State
TC = 25°C TC = 100°C
ID
17 A 11
Power Dissipation
Steady TC = 25°C State
PD
71 W
Pulsed Drain Current
tp = 10 ms
Operating and Storage Temperature Range
IDM TJ, Tstg
62
−55 to +175
A °C
Source Current (Body Diode)
Single Pulse Drain−to−Source Ava
NVD6416AN Datasheet
