Datasheet Summary
MOSFET
- Power, Single N-Channel
60 V, 4.1 mW, 89 A
Features
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS pliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
"20 V
Continuous Drain Cur-
TC = 25°C
ID rent RqJC (Notes 1 & 3) Steady TC = 100°C
Power Dissipation RqJC State TC = 25°C
(Note 1)
TC = 100°C
Continuous Drain Cur-
TA = 25°C
ID rent RqJA (Notes 1, 2 &
3)
Steady TA = 100°C
Power...
