NVD5C648NL
Features
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
"20 V
Continuous Drain Cur-
TC = 25°C
ID rent Rq JC (Notes 1 & 3) Steady TC = 100°C
Power Dissipation Rq JC State TC = 25°C
(Note 1)
TC = 100°C
Continuous Drain Cur-
TA = 25°C
ID rent Rq JA (Notes 1, 2 &
3)
Steady TA = 100°C
Power Dissipation Rq JA State TA = 25°C
(Notes 1 & 2)
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms IDM
Operating Junction and Storage Temperature
TJ, Tstg
- 55 to °C 175
Source Current (Body Diode)
Single Pulse Drain- to- Source Avalanche Energy (TJ = 25°C, IL(pk) = 7.0...
