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  ON Semiconductor Electronic Components Datasheet  

NVD5C434N Datasheet

Power MOSFET

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NVD5C434N
Power MOSFET
40 V, 2.1 mW, 163 A, Single N−Channel
Features
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent RqJC (Notes 1 & 3)
Power Dissipation RqJC
(Note 1)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Continuous Drain
Current RqJA
(Notes 1, 2 & 3)
Power Dissipation RqJA
(Notes 1 & 2)
TA = 25°C
Steady TA = 100°C
State TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
40
"20
163
115
117
58
26
22
3.2
2.2
900
−55 to
175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS 130 A
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, IL(pk) = 25 A)
EAS 420 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case (Drain) (Note 1)
RqJC
1.28 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA
48
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
www.onsemi.com
V(BR)DSS
40 V
RDS(on)
2.1 mW @ 10 V
D
ID
163 A
G
S
N−CHANNEL MOSFET
4
12
3
DPAK
CASE 369C
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
2
1 Drain 3
Gate Source
A = Assembly Location
Y = Year
WW = Work Week
5C434N= Device Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
January, 2017 − Rev. 0
1
Publication Order Number:
NVD5C434N/D


  ON Semiconductor Electronic Components Datasheet  

NVD5C434N Datasheet

Power MOSFET

No Preview Available !

NVD5C434N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
40
18
V
mV/°C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
IDSS
IGSS
VGS = 0 V,
VDS = 40 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = 20 V
10 mA
250
100 nA
Gate Threshold Voltage
VGS(TH)
Negative Threshold Temperature Coefficient VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCES
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 50 A
VDS = 3 V, ID = 50 A
2.0 4.0 V
7.9 mV/°C
1.7 2.1 mW
155 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
SWITCHING CHARACTERISTICS (Note 5)
Ciss
Coss
Crss
QG(TOT)
QG(TH)
QGS
QGD
VGP
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
VGS = 10 V, VDS = 32 V,
ID = 50 A
5400
3000
71
80.6
15.2
25.2
15.4
4.8
pF
nC
V
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
td(on)
tr
td(off)
tf
VGS = 10 V, VDS = 32 V,
ID = 50 A, RG = 2.5 W
15 ns
78
43
14
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
VSD
VGS = 0 V,
TJ = 25°C
IS = 50 A
TJ = 125°C
tRR
ta VGS = 0 V, dIs/dt = 100 A/ms,
tb IS = 50 A
0.8 1.2
V
0.7
73 ns
36
37
Reverse Recovery Charge
QRR
120 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
5. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2


Part Number NVD5C434N
Description Power MOSFET
Maker ON Semiconductor
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