NVBG095N65S3F mosfet equivalent, n-channel mosfet.
* 700 V @ TJ = 150°C
* Typ. RDS(on) = 78 mW
* Ultra Low Gate Charge (Typ. Qg = 66 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 597 pF)
* .
* Automotive On Board Charger
* Automotive DC/DC Converter for BEV
DATA SHEET www.onsemi.com
V(BR)DSS 650 V
R.
SUPERFET® III MOSFET is onsemi’s brand−new high voltage
super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimiz.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 230.03KB)