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  ON Semiconductor Electronic Components Datasheet  

NTZS3151P Datasheet

Small Signal MOSFET

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NTZS3151P
Small Signal MOSFET
20 V, 950 mA, PChannel SOT563
Features
Low RDS(on) Improving System Efficiency
Low Threshold Voltage
Small Footprint 1.6 x 1.6 mm
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Load/Power Switches
Battery Management
Cell Phones, Digital Cameras, PDAs, Pagers, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Parameter
Symbol Value
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain Current
(Note 1)
Power Dissipation
(Note 1)
Steady TA = 25°C
State TA = 70°C
Steady State
VDSS
VGS
ID
PD
20
±8.0
860
690
170
Continuous Drain Current
(Note 1)
Power Dissipation
(Note 1)
tv5s
TA = 25°C
TA = 70°C
tv5s
ID
PD
950
760
210
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IDM
TJ,
TSTG
IS
TL
4.0
55 to
150
360
260
Unit
V
V
mA
mW
mA
mW
A
°C
mA
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
JunctiontoAmbient – Steady State (Note 1)
JunctiontoAmbient – t v 5 s (Note 1)
RqJA
RqJA
720 °C/W
600
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 in. sq. pad size
(Cu. area = 1.127 in. sq. [1 oz.] including traces).
http://onsemi.com
V(BR)DSS
20 V
RDS(on) Typ
120 mW @ 4.5 V
144 mW @ 2.5 V
195 mW @ 1.8 V
ID Max
950 mA
PChannel MOSFET
D
G
S
6
1
SOT5636
CASE 463A
MARKING
DIAGRAM
TX M G
G
TX = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
PINOUT: SOT563
D1
6D
D2
5D
G3
4S
Top View
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
January, 2013 Rev. 3
1
Publication Order Number:
NTZS3151P/D


  ON Semiconductor Electronic Components Datasheet  

NTZS3151P Datasheet

Small Signal MOSFET

No Preview Available !

NTZS3151P
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VGS = 0 V
TJ = 25°C
VDS = 20 V
TJ = 125°C
VDS = 0 V, VGS = "8.0 V
Gate Threshold Voltage
Negative Threshold
Temperature Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
DraintoSource On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
VGS = 4.5 V, ID = 950 mA
VGS = 4.5 V, ID = 770 mA
VGS = 2.5 V, ID = 670 mA
VGS = 1.8 V, ID = 200 mA
VDS = 10 V, ID = 810 mA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
SWITCHING CHARACTERISTICS (Note 3)
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f = 1.0 MHz,
VDS = 16 V
VGS = 4.5 V, VDS = 10 V;
ID = 770 mA
TurnOn Delay Time
td(ON)
Rise Time
tr
TurnOff Delay Time
td(OFF)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDD = 10 V,
ID = 950 mA, RG = 6.0 W
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 360 mA
TJ = 25°C
TJ = 125°C
Reverse Recovery Time
tRR VGS = 0 V, dIS/dt = 100 A/ms,
IS = 360 mA
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
Min
20
0.45
Typ
13
2.4
120
112
144
195
3.1
458
61
38
5.6
0.6
0.9
1.2
5.0
12
23.7
18
0.64
0.5
10.5
Max Unit
V
mV/°C
1.0
5.0
"100
mA
nA
1.0 V
mV/°C
150 mW
142
200
240
S
pF
nC
ns
0.9 V
ns
http://onsemi.com
2


Part Number NTZS3151P
Description Small Signal MOSFET
Maker ON Semiconductor
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