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NTTFS4929N
MOSFET – Power, Single, N-Channel, m8FL
30 V, 34 A
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters • Power Load Switch • Notebook Battery Management • Motor Control
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1)
Power Dissipation RqJA (Note 1)
VDSS
30
V
VGS
±20 V
TA = 25°C
ID
10.6 A
TA = 85°C
7.7
TA = 25°C
PD
2.11 W
Continuous Drain Current RqJA ≤ 10 s (Note 1)
TA = 25°C
ID
14.3 A
TA = 85°C
10.
NTTFS4929N Datasheet
