NTTFD021N08C datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

Q1: N−Channel
* Max rDS(on) = 21 mW at VGS = 10 V, ID = 7.8 A
* Max rDS(on) = 55 mW at VGS = 6 V, ID = 3.9 A Q2: N−Channel
* Max rDS(on) = 21 mW at VGS = 10 V.

Application

* Computing
* Communications
* General Purpose Point of Load PIN DESCRIPTION Pin Name 1, 11, 12 GND (LS.

Description

This device includes two specialized N−Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q2) and synchronous (Q1) have been design.

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