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MOSFET – Single P-Channel, Small Signal, SOT-23
-8.0 V, -3.7 A
NTR2101P
Features
Leading Trench Technology for Low RDS(on) −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint (3 x 3 mm) This is a Pb−Free Device
Applications
High Side Load Switch DC−DC Conversion Cell Phone, Notebook, PDAs, etc.
MAXIMUM RATINGS (TJ = 25C unless otherwise stated)
Symbol
Parameter
Value Unit
VDSS Drain−to−Source Voltage
−8.0
V
VGS Gate−to−Source Voltage
8.0
V
ID
Continuous Drain
t 5 s TA = 25C −3.7
A
Current (Note
1)
TA = 70C −3.0
PD Power Dissipation (Note 1)
t5s
0.96 W
IDM Pulsed Drain Current
tp = 10 ms
−11
A
TJ,
Operating Junction and Storage Temperature −55 to C
TSTG
150
IS
Source Current (Body Diode)
−1.
NTR2101P Datasheet
