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NTP4804NG - Power MOSFET

Features

  • Low RDS(on) to Minimize Conduction Losses.
  • Low Capacitance to Minimize Driver Losses.
  • Optimized Gate Charge to Minimize Switching Losses.
  • These are Pb.
  • Free Devices.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTP4804N Power MOSFET 30 V, 133 A, Single N−Channel, TO−220 Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb−Free Devices* Applications • AC–DC Converters • DC−DC Converters • Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain (CNuortreen1t)RqJA Power Dissipation RqJA (Note 1) Continuous Drain Current RqJC Steady State Power Dissipation RqJC TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C VDSS VGS ID PD ID PD 30 V ±20 V 21 A 13 3.
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