NTP30N20G Datasheet | onsemi

NTP30N20 Preferred Device Power MOSFET 30 Amps, 200 Volts N- Channel Enhancement- Mode TO- 220 Features - Source- to- Drain Diode Recovery Time parable to a Discrete Fast Recovery Diode - Avalanche Energy Specified - IDSS and RDS(on) Specified at Elevated Temperature - Pb- Free Package is Available- Applications - PWM Motor Controls - Power Supplies - Converters MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain- to- Source Voltage Drain- to- Source Voltage (RGS = 1.0 MW) Gate- to- Source Voltage - Continuous - Non- Repetitive (tpv10 ms) Drain Current - Continuous @ TA 25°C - Continuous @ TA 100°C - Pulsed (Note 1) Total Power Dissipation @ TA = 25°C Derate above...