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NTP30N20
Preferred Device
Power MOSFET 30 Amps, 200 Volts
N−Channel Enhancement−Mode TO−220
Features
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Avalanche Energy Specified • IDSS and RDS(on) Specified at Elevated Temperature • Pb−Free Package is Available*
Applications
• PWM Motor Controls • Power Supplies • Converters
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Source Voltage (RGS = 1.0 MW)
Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms)
Drain Current − Continuous @ TA 25°C − Continuous @ TA 100°C − Pulsed (Note 1)
Total Power Dissipation @ TA = 25°C Derate above 25°C
VDSS VDGR
VGS VGSM
ID ID IDM PD
200 200
"30 "40
30 22 90 214 1.
NTP30N20G Datasheet
