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NTMS4177P - P-Channel Power MOSFET

Features

  • Low RDS(on) to Minimize Conduction Losses.
  • Low Capacitance to Minimize Driver Losses.
  • Optimized Gate Charge to Minimize Switching Losses.
  • SOIC.
  • 8 Surface Mount Package Saves Board Space.
  • This is a Pb.
  • Free Device.

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Datasheet Details

Part number NTMS4177P
Manufacturer onsemi
File Size 189.75 KB
Description P-Channel Power MOSFET
Datasheet download datasheet NTMS4177P Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Power, P-Channel, SOIC-8 -30 V, -11.4 A NTMS4177P Features  Low RDS(on) to Minimize Conduction Losses  Low Capacitance to Minimize Driver Losses  Optimized Gate Charge to Minimize Switching Losses  SOIC−8 Surface Mount Package Saves Board Space  This is a Pb−Free Device Applications  Load Switches  Notebook PC’s  Desktop PC’s MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Symbol Rating Value Unit VDSS Drain−to−Source Voltage −30 V VGS Gate−to−Source Voltage 20 V ID Continuous Drain Current RqJA (Note 1) TA = 25C −8.9 A TA = 70C −7.1 PD Power Dissipation RqJA (Note 1) TA = 25C 1.52 W ID Continuous Drain TA = 25C −6.6 A Current RqJA (Note 2) Steady TA = 70C −5.3 PD Power Dissipation RqJA (Note 2) State TA = 25C 0.
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