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NTMFSS0D9N03P8 - N-Channel MOSFET

Features

  • Advance 5x6 mm Package with Source Down and Center Gate Design to Improve Power Density, Efficiency, and Thermal Performance.
  • Low RDS(on) to Minimize Conduction Losses.
  • Low QG and Capacitance to Minimize Driver Losses.
  • These Devices are Pb.
  • Free, Halogen.
  • Free / BFR Free and are RoHS Compliant Typical.

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Full PDF Text Transcription

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MOSFET - Power, Single N-Channel, Source-Down 30 V, 1.0 mW, 294 A NTMFSS0D9N03P8 DATA SHEET www.onsemi.com V(BR)DSS 30 V RDS(ON) MAX 1.0 mW @ 10 V 1.2 mW @ 4.
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