NTH4LN019N65S3H mosfet equivalent, n-channel mosfet.
* 700 V @ TJ = 150°C
* Typ. RDS(on) = 15 mW
* Ultra Low Gate Charge (Typ. Qg = 282 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 2495 pF)
.
* Telecom / Server Power Supplies
* Industrial Power Supplies
* UPS / Solar
DATA SHEET www.onsemi.com
VDSS.
SUPERFET III MOSFET is onsemi’s brand−new high voltage
super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize.
Image gallery
TAGS