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NTH4L080N120SC1 - SiC MOSFET

Datasheet Summary

Description

that provide superior switching performance and higher reliability compared to Silicon.

In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.

Features

  • 1200 V @ TJ = 175°C.
  • Max RDS(on) = 110 mW at VGS = 20 V, ID = 20 A.
  • High Speed Switching with Low Capacitance.
  • 100% Avalanche Tested.
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
  • Free 2LI (on second level interconnection).

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Silicon Carbide (SiC) MOSFET – EliteSiC, 80 mohm, 1200 V, M1, TO-247-4L NTH4L080N120SC1 Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
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