• Part: NTH4L080N120SC1
  • Description: SiC MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 404.34 KB
NTH4L080N120SC1 Datasheet (PDF) Download
onsemi
NTH4L080N120SC1

Overview

  • 1200 V @ TJ = 175°C
  • Max RDS(on) = 110 mW at VGS = 20 V, ID = 20 A
  • High Speed Switching with Low Capacitance
  • 100% Avalanche Tested
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb-Free 2LI (on second level interconnection)