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NTH4L080N120SC1 Datasheet, ON Semiconductor

NTH4L080N120SC1 mosfet equivalent, sic mosfet.

NTH4L080N120SC1 Avg. rating / M : 1.0 rating-12

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NTH4L080N120SC1 Datasheet

Features and benefits


* 1200 V @ TJ = 175°C
* Max RDS(on) = 110 mW at VGS = 20 V, ID = 20 A
* High Speed Switching with Low Capacitance
* 100% Avalanche Tested
* This Devic.

Application


* Industrial Motor Drive
* UPS
* Boost Inverter
* PV Charger DATA SHEET www.onsemi.com VDSS 1200 V RD.

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Con.

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TAGS

NTH4L080N120SC1
SiC
MOSFET
NTH4L013N120M3S
NTH4L014N120M3P
NTH4L015N065SC1
ON Semiconductor

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