NTH4L080N120SC1 mosfet equivalent, sic mosfet.
* 1200 V @ TJ = 175°C
* Max RDS(on) = 110 mW at VGS = 20 V, ID = 20 A
* High Speed Switching with Low Capacitance
* 100% Avalanche Tested
* This Devic.
* Industrial Motor Drive
* UPS
* Boost Inverter
* PV Charger
DATA SHEET www.onsemi.com
VDSS 1200 V
RD.
Silicon Carbide (SiC) MOSFET uses a completely new technology
that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Con.
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