NTH4L027N65S3F mosfet equivalent, n-channel mosfet.
* 700 V @ TJ = 150°C
* Typ. RDS(on) = 23 mW
* Ultra Low Gate Charge (Typ. Qg = 259 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF)
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* Telecom / Server Power Supplies
* Industrial Power Supplies
* EV Charger
* UPS / Solar
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SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored t.
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