NTH4L013N120M3S
NTH4L013N120M3S is SiC MOSFET manufactured by onsemi.
Features
- Typ. RDS(on) = 13 m W @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 254 n C)
- High Speed Switching with Low Capacitance (Coss = 262 p F)
- 100% Avalanche Tested
- This Device is Halide Free and Ro HS pliant with exemption 7a,
Pb- Free 2LI (on second level interconnection)
Typical Applications
- Solar Inverters
- Electric Vehicle Charging Stations
- UPS (Uninterruptible Power Supplies)
- Energy Storage Systems
- SMPS (Switch Mode Power Supplies)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
- 10/+22
Continuous Drain Current
- Steady State
(Notes 1, 3)
TC = 25°C TC = 100°C
151 107
Power Dissipation
- Steady State (Note 1)
TC = 25°C
TC = 100°C
W 682 340
Pulsed Drain Current (Note 2), TC = 25°C
Operating Junction and Storage Temperature Range
TJ,...
