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NTH4L013N120M3S - SiC MOSFET

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ON Semiconductor

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NTH4L013N120M3S SiC MOSFET by ON Semiconductor - Datasheet Preview — Datasheet preview – NTH4L013N120M3S

Datasheet Details

Part number	NTH4L013N120M3S
Manufacturer	ON Semiconductor
File Size	328.43 KB
Description	SiC MOSFET
Datasheet	NTH4L013N120M3S Datasheet
Additional preview pages of the NTH4L013N120M3S datasheet.

Product details

Features

Typ. RDS(on) = 13 mW @ VGS = 18 V.
Ultra Low Gate Charge (QG(tot) = 254 nC).
High Speed Switching with Low Capacitance (Coss = 262 pF).
100% Avalanche Tested.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

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Published: Aug 22, 2024 |