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NTH4L013N120M3S Datasheet | onsemi
Part
NTH4L013N120M3S
Description
SiC MOSFET
Category
MOSFET
Manufacturer
onsemi
Size
328.43 KB
NTH4L013N120M3S Datasheet (PDF) Download
onsemi
NTH4L013N120M3S
Overview
Typ. RDS(on) = 13 mW @ VGS = 18 V
Ultra Low Gate Charge (QG(tot) = 254 nC)
High Speed Switching with Low Capacitance (Coss = 262 pF)
100% Avalanche Tested
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb-Free 2LI (on second level interconnection)
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