Part NTH4L013N120M3S
Description SiC MOSFET
Category MOSFET
Manufacturer onsemi
Size 328.43 KB
onsemi
NTH4L013N120M3S

Overview

  • Typ. RDS(on) = 13 mW @ VGS = 18 V
  • Ultra Low Gate Charge (QG(tot) = 254 nC)
  • High Speed Switching with Low Capacitance (Coss = 262 pF)
  • 100% Avalanche Tested
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb-Free 2LI (on second level interconnection)