Power MOSFET
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* Complementary N−Channel and P−Channel MOSFET Small Size (3 x 3 mm) Dual TSOP−6 Package Leading Edge Trench Technology .

−2.7 A
* DC−DC Conversion Circuits
* Load/Power Switching with Level Shift MAXIMUM RATINGS (TJ = 25°C unless o.

NTGD3147F

NTGD3148N

NTGD3133P

NTGD1100L

NTGD4161P

NTGD4167C

NTGD4169F

NTG

NTG222-3950

NTGS3130N

NTGS3433T1

NTGS3441

NTGS3441B

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