NTCR040N120M3S - SiC MOSFET

Description

that provides superior switching performance and higher reliability compared to Silicon.

In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.

Features

Typ. RDS(on) = 40 mW @ VGS = 18 V.
Ultra Low Gate Charge (QG(tot) = 75 nC).
High Speed Switching with Low Capacitance (Coss = 80 pF).

ON Semiconductor

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Datasheet Details

Part number	NTCR040N120M3S
Manufacturer	ON Semiconductor
File Size	249.59 KB
Description	SiC MOSFET
Datasheet	NTCR040N120M3S Datasheet
Additional preview pages of the NTCR040N120M3S datasheet.

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Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M3S, Die Product Preview NTCR040N120M3S Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. Features • Typ.

Published: Jul 18, 2024 |