NTCR040N120M3S mosfet equivalent, sic mosfet.
* Typ. RDS(on) = 40 mW @ VGS = 18 V
* Ultra Low Gate Charge (QG(tot) = 75 nC)
* High Speed Switching with Low Capacitance (Coss = 80 pF)
Applications
* S.
* Solar Inverters
* Electric Vehicle Charging Stations
* Uninterruptible Power Supplies (UPS)
* Energy S.
Silicon Carbide (SiC) MOSFET uses a completely new technology
that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Co.
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