Datasheet4U Logo Datasheet4U.com

NTCR040N120M3S - SiC MOSFET

General Description

that provides superior switching performance and higher reliability compared to Silicon.

In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.

Key Features

  • Typ. RDS(on) = 40 mW @ VGS = 18 V.
  • Ultra Low Gate Charge (QG(tot) = 75 nC).
  • High Speed Switching with Low Capacitance (Coss = 80 pF).

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M3S, Die Product Preview NTCR040N120M3S Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. Features • Typ.