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NTCR040N120M3S Datasheet Sic MOSFET

Manufacturer: onsemi

Overview: Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200 V, M3S, Die Product Preview.

General Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon.

In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.

Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Key Features

  • Typ. RDS(on) = 40 mW @ VGS = 18 V.
  • Ultra Low Gate Charge (QG(tot) = 75 nC).
  • High Speed Switching with Low Capacitance (Coss = 80 pF).

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