logo

NTBG028N170M1 Datasheet ON Semiconductor

Download Datasheet
File Size : 294.44KB · NTBG028N170M1 Avg. rating / M : star-12

Features and Benefits


• Typ. RDS(on) = 28 mW
• Ultra Low Gate Charge (typ. QG(tot) = 222 nC)
• Low Effective Output Capacitance (typ. Coss = 200 pF)
• 100% Avalanche Tested
• RoHS Compliant Typical Applications
• UPS
• DC.

NTBG028N170M1 NTBG028N170M1 NTBG028N170M1
TAGS
SiC
MOSFET
NTBG028N170M1
NTBG020N090SC1
NTBG020N120SC1

Stock and Price

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy