Part NTBG028N170M1
Description SiC MOSFET
Category MOSFET
Manufacturer onsemi
Size 294.44 KB
onsemi
NTBG028N170M1

Overview

  • Typ. RDS(on) = 28 mW
  • Ultra Low Gate Charge (typ. QG(tot) = 222 nC)
  • Low Effective Output Capacitance (typ. Coss = 200 pF)
  • 100% Avalanche Tested
  • RoHS Compliant