NTBG028N170M1
NTBG028N170M1 is SiC MOSFET manufactured by onsemi.
Features
- Typ. RDS(on) = 28 m W
- Ultra Low Gate Charge (typ. QG(tot) = 222 n C)
- Low Effective Output Capacitance (typ. Coss = 200 p F)
- 100% Avalanche Tested
- Ro HS pliant
Typical Applications
- UPS
- DC- DC Converter
- Boost Converter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
Gate- to- Source Voltage
Remended Operation Values of Gate- to- Source Voltage
TC < 175°C
VDSS
- 15/+25 V
VGSop
- 5/+20 V
Continuous Drain Current (Note 2)
Steady TC = 25°C
State
Power Dissipation (Note 2)
428 W
Continuous Drain Current (Note 2)
Steady TC = 100°C
State
Power Dissipation (Note 2)
214 W
Pulsed Drain Current (Note...
