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NTBG028N170M1 - SiC MOSFET

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ON Semiconductor

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NTBG028N170M1 SiC MOSFET by ON Semiconductor - Datasheet Preview — Datasheet preview – NTBG028N170M1

Datasheet Details

Part number	NTBG028N170M1
Manufacturer	ON Semiconductor
File Size	294.44 KB
Description	SiC MOSFET
Datasheet	NTBG028N170M1 Datasheet
Additional preview pages of the NTBG028N170M1 datasheet.

Product details

Features

Typ. RDS(on) = 28 mW.
Ultra Low Gate Charge (typ. QG(tot) = 222 nC).
Low Effective Output Capacitance (typ. Coss = 200 pF).
100% Avalanche Tested.
RoHS Compliant Typical.

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Published: Jun 1, 2024 |