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NTBG028N170M1 Datasheet | onsemi
Part
NTBG028N170M1
Description
SiC MOSFET
Category
MOSFET
Manufacturer
onsemi
Size
294.44 KB
NTBG028N170M1 Datasheet (PDF) Download
onsemi
NTBG028N170M1
Overview
Typ. RDS(on) = 28 mW
Ultra Low Gate Charge (typ. QG(tot) = 222 nC)
Low Effective Output Capacitance (typ. Coss = 200 pF)
100% Avalanche Tested
RoHS Compliant
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