NTBG020N090SC1 Description
Silicon Carbide (SiC) MOSFET EliteSiC, 20 mohm, 900 V, M2, D2PAK-7L NTBG020N090SC1.
NTBG020N090SC1 Key Features
- Typ. RDS(on) = 20 mW @ VGS = 15 V
- Typ. RDS(on) = 16 mW @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 200 nC)
- Low Effective Output Capacitance (Coss = 295 pF)
- 100% Avalanche Tested
- This Device is Halide Free and RoHS pliant with exemption 7a