NTBG020N090SC1 Datasheet ON Semiconductor

Features and Benefits

• Typ. RDS(on) = 20 mW @ VGS = 15 V
• Typ. RDS(on) = 16 mW @ VGS = 18 V
• Ultra Low Gate Charge (QG(tot) = 200 nC)
• Low Effective Output Capacitance (Coss = 295 pF)
• 100% Avalanche Tested
• This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnectio.