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NTBG020N090SC1 Datasheet ON Semiconductor

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ON Semiconductor · NTBG020N090SC1 File Size : 319.51KB · 1 hits

Features and Benefits


• Typ. RDS(on) = 20 mW @ VGS = 15 V
• Typ. RDS(on) = 16 mW @ VGS = 18 V
• Ultra Low Gate Charge (QG(tot) = 200 nC)
• Low Effective Output Capacitance (Coss = 295 pF)
• 100% Avalanche Tested
• This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnectio.

NTBG020N090SC1 NTBG020N090SC1 NTBG020N090SC1
TAGS
SiC
MOSFET
NTBG020N090SC1
NTBG020N120SC1
NTBG025N065SC1
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