Datasheet4U Logo Datasheet4U.com

NSVF3007SG3 - RF Transistor

Key Features

  • Low-noise use : NF = 1.2 dB typ. (f = 1 GHz).
  • High cut-off frequency : fT = 8 GHz typ. (VCE = 5 V).
  • High gain : |S21e|2 = 12 dB typ. (f = 1 GHz).
  • AEC-Q101 qualified and PPAP capable.
  • MCPH3 package is pin-compatible with SC-70FL.
  • Pb-Free, Halogen Free and RoHS compliance Typical.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NSVA253 SAW FILTER New Japan Radio
NSVA254 SAW FILTER New Japan Radio
NSVA276 SAW FILTER New Japan Radio
NSVA277 SAW FILTER New Japan Radio
NSVA279 SAW FILTER New Japan Radio

Other Datasheets by onsemi

Part Number Description
NSVF4009SG4 RF Transistor
NSVF4020SG4 RF Transistor
NSVF6003SB6 RF Transistor
NSV1C200L PNP Transistor
NSV1C200MZ4 PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NSVF3007SG3 Advance Information RF Transistor for Low Noise Amplifier This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications. Features  Low-noise use : NF = 1.2 dB typ. (f = 1 GHz)  High cut-off frequency : fT = 8 GHz typ. (VCE = 5 V)  High gain : |S21e|2 = 12 dB typ.