NSV1C200MZ4 Datasheet | onsemi

NSS1C200MZ4, NSV1C200MZ4 100 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2Power Edge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC- DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, puters, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2Power Edge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal ponents in analog amplifiers. Features - NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free, Halogen Free and are Ro HS pliant MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current - Continuous Collector Current - Continuous Collector Current - Peak THERMAL CHARACTERISTICS Symbol VCEO VCBO VEBO IB IC ICM Max - 100 - 140 - 7.0 1.0 2.0 3.0 Unit Vdc Vdc Vdc Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction- to- Ambient PD (Note 1) 800 m W 6.5 m...