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NST3906F3T5G - PNP Transistor

Features

  • hFE, 100.
  • 300.
  • Low VCE(sat), ≤ 0.4 V.
  • Reduces Board Space.
  • This is a Pb.
  • Free Device.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NST3906F3T5G PNP General Purpose Transistor The NST3906F3T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563/SOT−963 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−1123 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. Features • hFE, 100−300 • Low VCE(sat), ≤ 0.4 V • Reduces Board Space • This is a Pb−Free Device MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS Symbol VCEO VCBO VEBO IC Value −40 −40 −5.0 −200 Unit Vdc Vdc Vdc mAdc Characteristic Total Device Dissipation, TA = 25°C Derate above 25°C Symbol PD (Note 1) Max 290 2.
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