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NSR20F30NXT5G - Schottky Barrier Diode

Key Features

  • Very Low Forward Voltage Drop.
  • 480 mV @ 2.0 A.
  • Low Reverse Current.
  • 20 mA @ 10 V VR.
  • 2.0 A of Continuous Forward Current.
  • Power Dissipation of 665 mW with Minimum Trace.
  • ESD Rating.
  • Human Body Model: Class 3B ESD Rating.
  • Machine Model: Class C.
  • Very High Switching Speed.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diode NSR20F30NXT5G These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. Features • Very Low Forward Voltage Drop − 480 mV @ 2.0 A • Low Reverse Current − 20 mA @ 10 V VR • 2.