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NSR10F40QNXT5G - Schottky Diode Optimized for High Frequency Switching Power Supplies

Features

  • Very Low Forward Voltage Drop.
  • 490 mV @ 1.0 A.
  • Low Reverse Current.
  • 10 mA @ 10 V VR.
  • 1.0 A of Continuous Forward Current.
  • ESD Rating.
  • Human Body Model: Class 3B ESD Rating.
  • Machine Model: Class C.
  • Very High Switching Speed.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant Typical.

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Datasheet Details

Part number NSR10F40QNXT5G
Manufacturer onsemi
File Size 255.27 KB
Description Schottky Diode Optimized for High Frequency Switching Power Supplies
Datasheet download datasheet NSR10F40QNXT5G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NSR10F40QNXT5G Schottky Diode Optimized for High Frequency Switching Power Supplies These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. Features • Very Low Forward Voltage Drop − 490 mV @ 1.0 A • Low Reverse Current − 10 mA @ 10 V VR • 1.