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NSB9435T1G - High Current Bias Resistor Transistor

Features

  • Collector.
  • Emitter Sustaining Voltage.
  • VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc.
  • High DC Current Gain.
  • hFE = 125 (Min) @ IC = 0.8 Adc = 90 (Min) @ IC = 3.0 Adc.
  • Low Collector.
  • Emitter Saturation Voltage.
  • VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc = 0.55 Vdc (Max) @ IC = 3.0 Adc.
  • SOT.
  • 223 Surface Mount Packaging.
  • ESD Rating.
  • Human Body Model: Class 1B.
  • Machine Model: Class B.
  • AEC.
  • Q101 Qualifie.

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Datasheet Details

Part number NSB9435T1G
Manufacturer onsemi
File Size 139.42 KB
Description High Current Bias Resistor Transistor
Datasheet download datasheet NSB9435T1G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NSB9435T1G, NSV9435T1G High Current Bias Resistor Transistor PNP Silicon Features  Collector −Emitter Sustaining Voltage − VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc  High DC Current Gain − hFE = 125 (Min) @ IC = 0.8 Adc = 90 (Min) @ IC = 3.0 Adc  Low Collector −Emitter Saturation Voltage − VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc = 0.55 Vdc (Max) @ IC = 3.