NS2029M3 transistor equivalent, pnp silicon general purpose amplifier transistor.
* Reduces Board Space
* High hFE, 210 −460 (Typical)
* Low VCE(sat), < 0.5 V
* ESD Performance: Human Body Model; u 2000 V,
Machine Model; u 200 V
* A.
This device is housed in the SOT−723 package which is designed for low power surface mount applications, where board sp.
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