NILMS4501N Datasheet Text
NILMS4501N
Power MOSFET with Current Mirror FET
24 V, 9.5 A, N- Channel, ESD Protected, 1:250 Current Mirror, SO- 8 Leadless
N- Channel MOSFET with 1:250 current mirror device utilizing the latest ON Semiconductor technology to achieve low figure of merit while keeping a high accuracy in the linear region. This device takes advantage of the latest leadless QFN package to improve thermal transfer.
Features
- Current Sense MOSFET
- "15% Current Mirror Accuracy
- ESD Protected on the Main and the Mirror MOSFET
- Low Gate Charge
- Pb- Free Package is Available-
Applications
- DC- DC Converters
- Voltage Regulator Modules
- Small DC Motor Controls
- For additional information on our Pb- Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor ponents Industries, LLC, 2006
1
May, 2006
- Rev. 4 http://onsemi.
VDSS 24 V
RDS(on) Typ 12 mW @ 4.5 V
ID MAX 9.5 A
N- Channel with Current
Mirror FET
Drain
Gate
Main
Sense
Source
MARKING DIAGRAM...