Datasheet4U Logo Datasheet4U.com

NGTB40N120FL3WG - IGBT

Features

  • a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NGTM2332M091TR20F Surface Mount Gas Discharge Tube NIC COMPONENTS
NGTM2332M152TR10F Surface Mount Gas Discharge Tube NIC COMPONENTS
NGTM2332M351TR20F Surface Mount Gas Discharge Tube NIC COMPONENTS
NGTM2332M362TR05F Surface Mount Gas Discharge Tube NIC COMPONENTS
NGTM2332M471TR20F Surface Mount Gas Discharge Tube NIC COMPONENTS

Other Datasheets by onsemi

Part Number Description
NGTB40N120FL2WAG IGBT
NGTB40N120FL2WG IGBT
NGTB40N120FLWG IGBT
NGTB40N120IHLWG IGBT
NGTB40N120IHRWG IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IGBT - Ultra Field Stop NGTB40N120FL3WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.