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NGTB30N120L2WG - IGBT

Features

  • a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NGTB30N120L2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
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