NDT3055 - N-Channel Enhancement Mode Field Effect Transistor

onsemi

Datasheet Details

Part number	NDT3055
Manufacturer	onsemi
File Size	196.06 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	NDT3055 Datasheet

General Description

These N−Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on−state resistance and provide superior switching performance.

These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in−line power loss, and resistance to transients are needed.

Overview

N-Channel Enhancement Mode Field Effect Transistor NDT3055 General.

Key Features

4 A, 60 V.
RDS(ON) = 0.100 W @ VGS = 10 V.
High Density Cell Design for Extremely Low RDS(ON).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
This is a Pb.
Free Device.

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