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NDT3055 - N-Channel Enhancement Mode Field Effect Transistor

General Description

These N

are produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance and provide superior switching performance.

Key Features

  • 4 A, 60 V.
  • RDS(ON) = 0.100 W @ VGS = 10 V.
  • High Density Cell Design for Extremely Low RDS(ON).
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package.
  • This is a Pb.
  • Free Device.

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Datasheet Details

Part number NDT3055
Manufacturer onsemi
File Size 196.06 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet NDT3055 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode Field Effect Transistor NDT3055 General Description These N−Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in−line power loss, and resistance to transients are needed. Features • 4 A, 60 V ♦ RDS(ON) = 0.