NDT3055
Description
These N-Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.
Key Features
- RDS(ON) = 0.100 W @ VGS = 10 V
- High Density Cell Design for Extremely Low RDS(ON)
- High Power and Current Handling Capability in a Widely Used Surface Mount Package
- This is a Pb-Free Device
