* −2.5 A, −60 V
* RDS(ON) = 300 mW @ VGS = −10 V
* RDS(ON) = 500 mW @ VGS = −4.5 V
* High Density Cell Design for Extremely Low RDS(ON).
* High Power .

* DC/DC Converter
* Power Management ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Para.

This 60 V P−Channel MOSFET is produced using onsemi’s high voltage Trench process. It has been optimized for power management plications. Features
* −2.5 A, −60 V
* RDS(ON) = 300 mW @ VGS = −10 V
* RDS(ON) = 500 mW @ VGS = −4.5 V
* Hi.

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