logo

NDT2955 Datasheet, ON Semiconductor

NDT2955 transistor equivalent, p-channel enhancement mode field effect transistor.

NDT2955 Avg. rating / M : 1.0 rating-12

datasheet Download

NDT2955 Datasheet

Features and benefits


* −2.5 A, −60 V
* RDS(ON) = 300 mW @ VGS = −10 V
* RDS(ON) = 500 mW @ VGS = −4.5 V
* High Density Cell Design for Extremely Low RDS(ON).
* High Power .

Application


* DC/DC Converter
* Power Management ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Para.

Description

This 60 V P−Channel MOSFET is produced using onsemi’s high voltage Trench process. It has been optimized for power management plications. Features
* −2.5 A, −60 V
* RDS(ON) = 300 mW @ VGS = −10 V
* RDS(ON) = 500 mW @ VGS = −4.5 V
* Hi.

Image gallery

NDT2955 Page 1 NDT2955 Page 2 NDT2955 Page 3

TAGS

NDT2955
P-Channel
Enhancement
Mode
Field
Effect
Transistor
NDT28P
NDT014
NDT014L
ON Semiconductor

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts