NDS9407 Description
This P−Channel MOSFET is a rugged gate version of onsemi’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5 V 20 V).
NDS9407 Key Features
- 3 A, -60 V. RDS(ON) = 150 mW @ VGS = -10 V
- Low Gate Charge
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- These Device is Pb-Free and Halide Free