* −3 A, −60 V. RDS(ON) = 150 mW @ VGS = −10 V RDS(ON) = 240 mW @ VGS = −4.5 V
* Low Gate Charge
* Fast Switching Speed
* High Performance Trench Technolog.

requiring a wide range of gate drive voltage ratings (4.5 V
  – 20 V). Features
* −3 A, −60 V. RDS(ON).

This P−Channel MOSFET is a rugged gate version of onsemi’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5 V
  – 20 V). Features
* −3 A,.

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