* 48 A, 60 V
* RDS(ON) = 0.025 mW @ VGS = 10 V
* Critical DC Electrical Parameters Specified at Elevated Temperature
* Rugged Internal Source−Drain Diode .

such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low i.

These N−Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on−state resistance, provide superior.

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