Description
These N
are produced using onsemi’s proprietary, high cell density, DMOS technology.
state resistance, provide superior switching performance, and withst
Features
- 48 A, 60 V.
- RDS(ON) = 0.025 mW @ VGS = 10 V.
- Critical DC Electrical Parameters Specified at Elevated Temperature.
- Rugged Internal Source.
- Drain Diode Can Eliminate the Need for an
External Zener Diode Transient Suppressor.
- 175°C Maximum Junction Temperature Rating.
- High Density Cell Design for Extremely Low RDS(ON).
- TO.
- 220 Package for Both Through Hole and Surface Mount.
NDP6060 Datasheet
