NDP6060 - N-Channel FET

onsemi

Datasheet Details

Part number	NDP6060
Manufacturer	onsemi
File Size	254.01 KB
Description	N-Channel FET
Datasheet	NDP6060 Datasheet

General Description

These N−Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

This very high density process has been especially tailored to minimize on−state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.

These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in−line power loss, and resistance to transients are needed.

Overview

DATA SHEET www.onsemi.com MOSFET – N-Channel, Field Effect Transistor, Enhancement Mode NDP6060 / NDB6060 VDSS 60 V RDS(ON) MAX 0.

Key Features

48 A, 60 V.
RDS(ON) = 0.025 mW @ VGS = 10 V.
Critical DC Electrical Parameters Specified at Elevated Temperature.
Rugged Internal Source.
Drain Diode Can Eliminate the Need for an External Zener Diode Transient Suppressor.
175°C Maximum Junction Temperature Rating.
High Density Cell Design for Extremely Low RDS(ON).
TO.
220 Package for Both Through Hole and Surface Mount.

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