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NDP6060 - N-Channel FET

Description

These N

are produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance, provide superior switching performance, and withst

Features

  • 48 A, 60 V.
  • RDS(ON) = 0.025 mW @ VGS = 10 V.
  • Critical DC Electrical Parameters Specified at Elevated Temperature.
  • Rugged Internal Source.
  • Drain Diode Can Eliminate the Need for an External Zener Diode Transient Suppressor.
  • 175°C Maximum Junction Temperature Rating.
  • High Density Cell Design for Extremely Low RDS(ON).
  • TO.
  • 220 Package for Both Through Hole and Surface Mount.

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Datasheet Details

Part number NDP6060
Manufacturer onsemi
File Size 254.01 KB
Description N-Channel FET
Datasheet download datasheet NDP6060 Datasheet

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Full PDF Text Transcription

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DATA SHEET www.onsemi.com MOSFET – N-Channel, Field Effect Transistor, Enhancement Mode NDP6060 / NDB6060 VDSS 60 V RDS(ON) MAX 0.025 mW @ 10 V ID MAX 48 A D General Description These N−Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on−state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in−line power loss, and resistance to transients are needed.
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