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NCV57091C - IGBT/MOSFET Gate Driver

Download the NCV57091C datasheet PDF (NCV57090A included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for igbt/mosfet gate driver.

Description

No.

Power Input side power supply.

and should be placed close to the pins for best results.

Features

  • High Peak Output Current (+6.5 A/.
  • 6.5 A).
  • Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn.
  • on (Version A/D/F).
  • Short Propagation Delays with Accurate Matching.
  • IGBT/MOSFET Gate Clamping during Short Circuit.
  • IGBT/MOSFET Gate Active Pull Down.
  • Tight UVLO Thresholds for Bias Flexibility.
  • Wide Bias Voltage Range including Negative VEE2 (Version B).
  • 3.3 V, 5 V, an.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NCV57090A-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NCV57091C
Manufacturer onsemi
File Size 1.91 MB
Description IGBT/MOSFET Gate Driver
Datasheet download datasheet NCV57091C Datasheet

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Full PDF Text Transcription

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Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y (x = D or V, y = A, B, C, D, E or F) NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (version A/D/F), negative power supply (version B) and separate high and low (OUTH and OUTL) driver outputs (version C/E) for system design convenience. The driver accommodate wide range of input bias voltage and signal levels from 3.3 V to 20 V and they are available in wide−body SOIC−8 package. Features • High Peak Output Current (+6.5 A/−6.
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