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NCV57091C ON Semiconductor (https://www.onsemi.com/) IGBT/MOSFET Gate Driver

Description Pin Name No. I/O Description VDD1 1 Power Input side power supply. A good quality bypassing capacitor is required from this pin to GND1 and should be placed close to the pins for best results. The under voltage lockout (UVLO) circuit enables the device to operate at power on when a typical supply voltage higher than VUVLO1−OUT−ON is present. Please see Figures 9A and 9B for more details....
Features
• High Peak Output Current (+6.5 A/−6.5 A)
• Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn−on (Version A/D/F)
• Short Propagation Delays with Accurate Matching
• IGBT/MOSFET Gate Clamping during Short Circuit
• IGBT/MOSFET Gate Active Pull Down
• Tight UVLO Thresholds for Bias Flexibility
• Wide B...

Datasheet PDF File NCV57091C Datasheet - 1.91MB

NCV57091C  






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